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研究了大直径(φ50～75mm)低阻(5～15Ω·cm)NTDSi单晶的退火行为,讨论了大剂量中子辐照(～10~(18)n/cm~2)硅退火中“中照施主”形成与消失的条件,提出了合理的退火工艺.
The annealing behavior of NTDSi single crystal with large diameter (φ50 ~ 75mm) and low resistivity (5 ~ 15Ω · cm) was studied. The effects of high dose neutron irradiation (~ 10 ~ (18) n / cm ~ Chinese as a donor "formation and disappearance of conditions, put forward a reasonable annealing process.