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本文给出了存贮器阵列中α粒子感生载流子的模拟电荷收集测量的实验结果。报道了用高强度的箔和可变角度准直α粒子源对各种不同反射结构的存贮器阵列的电荷收集测量方法。用一种新型P阱势垒,电荷收集可减低两倍、软误差率(SER)可降低大约两个数量级。本文还提出了P阱掺杂浓度、深度、偏置电压和它与P~+衬底上P~-外延层的相互作用的实验分析结果。在154密耳中的64k DRAM电路有特别低的SER,即在1μs周期时间内SER低于0.001％千小时,这就证明了采用P阱势垒结构的有效性。
In this paper, experimental results of simulated charge collection measurements of α-particle induced carriers in a memory array are presented. A method of charge collection measurement of memory arrays of various reflective structures with high-intensity foils and variable-angle collimated a-particle sources is reported. With a new type of P-well barrier, charge collection can be reduced by a factor of two and the soft error rate (SER) can be reduced by about two orders of magnitude. The experimental results of P-well doping concentration, depth, bias voltage and its interaction with P ~ - epitaxial layer on P ~ + substrate are also presented in this paper. The 64 k DRAM circuit in 154 mils has a particularly low SER, ie, a SER below 0.001% thousands of hours in a 1 μs cycle time, demonstrating the usefulness of the P-well barrier structure.