论文部分内容阅读
采用线性扫描伏安法和计时安培法研究了硫酸铜溶液中铜在玻碳电极上电结晶的初期行为 .在含与不含氯离子的 0 0 5mol·L-1CuSO4 0 5mol·L-1H2 SO4电解液中 ,循环伏安实验结果表明铜在玻碳基体上的沉积没有经过UPD过程 ;氯离子明显使Cu的沉积和氧化峰变得尖锐 ,促进Cu的沉积速度 .计时安培实验结果表明 ,Cu的电结晶按瞬时成核和三维生长方式进行 .氯离子不改变Cu的电结晶机理 ,但在I～t曲线中 ,导致电流达最大 (Im)所需的时间tm 减小、晶核数密度和生长速度增大 ,从而明显改变Cu沉积层的质量 .当Cl-浓度在 10～ 2 0mg·L-1范围内 ,成核的晶核数密度达较大 ,即氯离子的最适宜添加量 .
Linear sweep voltammetry and chronoamperometry were used to study the initial behavior of copper electrocrystallization on the glassy carbon electrode in cupric sulfate solution. In the presence of 0 0 5 mol·L-1CuSO4 0 5 mol·L-1H2 SO4 The results of cyclic voltammetry in the electrolyte showed that the deposition of copper on the glassy carbon matrix did not undergo the UPD process, and the deposition and oxidation peak of Cu were sharply enhanced by chloride ions, which promoted the deposition rate of Cu.The chronoamperometry results showed that Cu The electrocrystallization is performed in the mode of instantaneous nucleation and three-dimensional growth.Chloride does not change the electrocrystallization mechanism of Cu, but in the I ~ t curve, the time tm which leads to the maximum current (Im) decreases, the nucleus number density And the growth rate increased significantly, which significantly changed the quality of Cu deposit.When the concentration of Cl- is in the range of 10 ~ 20 mg · L-1, the nucleation number density of nucleation is large, that is, the optimum dosage of chloride ion .