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本文提出了利用恒流瞬态技术测量硅片电学参数及MOS特性的新方法。改变位移电流的大小,使MOS结构处于不同瞬态,从而完成硅片电学参数(电导型号,掺杂浓度,少子寿命及雪崩击穿)和MOS特性(SiO_2厚度,平带电压及a系数)的快速测量。由于所测之杂质浓度与SiO_2厚度无关,可望浓度测量的精度会高些。电导型号的确定是杂质浓度测量的自然结果,而无需特别检查硅片的电导型号。对硅片雪崩击穿现象进行了直观和连续的观察,并且,发现了一种与传统观察结果不一样的MOS结构非稳态电容击穿特性。其他参数均可用瞬态技术简捷地进行测量。
In this paper, a new method of measuring the electrical parameters and MOS characteristics of silicon wafers by using the constant current transient technique is proposed. By changing the magnitude of the displacement current and making the MOS structure at different transients, the electrical parameters (conductivity type, doping concentration, minority lifetime and avalanche breakdown) and MOS characteristics (SiO 2 thickness, flat band voltage and a coefficient) Quick measurement. As the measured impurity concentration has nothing to do with the thickness of SiO_2, it is expected that the concentration measurement accuracy will be higher. The determination of the conductivity type is a natural result of the impurity concentration measurement without the need of special inspection of the conductivity type of the wafer. The phenomenon of avalanche breakdown of silicon wafers was observed visually and continuously, and a non-steady state breakdown characteristic of MOS structure was found, which is different from the traditional observation. Other parameters can be measured simply using transient techniques.