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Hg_(1-x)Cd_xTe(简写 MCT)是一种重要的红外材料。由于具有特殊的半导体性能,优质MCT 材料的制备是人们所关心的主要问题。本文报道在 CdTe 衬底上用单一的 MCT 源生长MCT 薄膜的汽相外延技术。汽相外延在10~(-5)-10~(-14)乇的高真空下进行,衬底温度(Td)在400-600℃、源温度(T_8)在450-650℃的范围内变化,典型的外延层厚度为18μm,生降速率为2-5μm/h。外延层表面形貌形成与生长条件和源的成分有关,经电镜分析表明外延沉积物为 MCT。
Hg_ (1-x) Cd_xTe (abbreviated MCT) is an important infrared material. Due to the special semiconductor properties, the preparation of high quality MCT materials is a major concern. This paper reports the vapor phase epitaxy of MCT grown on a CdTe substrate using a single MCT source. The vapor phase epitaxy was performed under a high vacuum of 10 -5 to 10 14 torr with a substrate temperature of 400-600 ° C and a source temperature of T_8 ranging from 450-650 ° C The typical epitaxial layer thickness is 18μm and the drop rate is 2-5μm / h. Epitaxial layer surface morphology and growth conditions and composition of the source related to the electron microscopy analysis shows that the epitaxial deposits MCT.