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本文阐述了分子束外延（ ＭＢＥ） 技术的特点以及在实现大面积均匀的超薄外延层生长中的应用。利用进口ＭＢＥ 设备， 实现了单量子阱（ＳＱＷ） 和多量子阱（ ＭＱＷ） 半导体激光器外延片的生长， 并对外延片的电学和光学特性进行了测试和分析。
This article describes the characteristics of molecular beam epitaxy (MBE) technology and its application in the realization of large area uniform epitaxial growth. The growth of single quantum well (SQW) and multiple quantum well (MQW) semiconductor laser epitaxial wafers was achieved by using imported MBE devices. The electrical and optical properties of the epitaxial wafers were tested and analyzed.