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用增强光电流模型对微电路 pn结瞬态电离辐射响应开展了数值模拟计算。该模型在Wirth-Rogers光电流模型的基础上 ,增加考虑了高注入对过剩载流子寿命的影响以及衬底 (准中性区 )电场的效应 ,这些效应对于高阻材料是不容忽视的。该模型对正确预估微电路 PN结瞬态电离辐射响应提供了很好的评估手段
The enhanced photocurrent model is used to simulate the transient ionization radiation response of the microcircuit pn junction. Based on the Wirth-Rogers photocurrent model, this model adds the effect of high injection on excess carrier lifetime and the effect of the substrate (quasi-neutral) electric field, which can not be neglected for high-resistance materials. The model provides a good evaluation method for correctly estimating the transient ionization radiation response of PN junction of microcircuit