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通过射频反应磁控溅射在玻璃基片上制备TiO2薄膜。采用X射线衍射仪、Ranman光谱仪和原子力显微镜研究退火温度对薄膜晶体结构和表面形貌的影响;还探讨了磁控溅射氧分压对薄膜性能的影响。结果表明:磁控溅射制备的薄膜在不同温度下退火,发现300℃退火薄膜没有结晶,薄膜表面呈圆形离散的颗粒状;400℃退火出现锐钛矿结构,是连续的致密均匀薄膜;500℃退火后薄膜锐钛矿结构更完善,(101)方向开始优先生长,空隙率变大,且锐钛矿结构更完整。随着退火温度的升高晶粒长大拉曼光谱出现红移,拉曼光谱所反应的锐钛矿信息增强,500℃退火时197cm-1出现了Eg振动模式。和标准的单晶TiO2体材料相比,拉曼峰位置都略有红移是纳米量子尺寸效应造成的。氩氧比分别为9∶1、7∶3和6∶4溅射制备的薄膜通过400℃退火后的XRD衍射谱没有明显的区别,但拉曼光谱显示氩氧比为7∶3时结晶要完善些。
TiO2 thin films were prepared on glass substrate by RF reactive magnetron sputtering. The effects of annealing temperature on the crystal structure and surface morphology of the films were investigated by X-ray diffraction, Ranman spectroscopy and atomic force microscopy. The effect of magnetron sputtering oxygen partial pressures on the film properties was also discussed. The results show that the films prepared by magnetron sputtering are annealed at different temperatures and found that the films annealed at 300 ℃ do not crystallize in the form of round grains. The films annealed at 400 ℃ have anatase structure and are continuous dense dense films. After annealed at 500 ℃, the anatase structure of the film is more perfect, and the direction of (101) starts to preferentially grow. The void ratio becomes larger and the anatase structure is more complete. With the increase of annealing temperature, the Raman spectra of grains grow red-shifted, and the anatase information of Raman spectra is enhanced. At 197cm-1 annealed at 500 ℃, the Eg vibration mode appears. Compared with the standard single-crystal TiO2 bulk material, the red shift at the Raman peak position is caused by the nano-quantum size effect. The XRD patterns of the films prepared by sputtering at 400 ℃ were not significantly different from those of the films prepared by sputtering at 9: 1, 7: 3 and 6: 4 respectively. However, the Raman spectra showed that the ratio of argon to oxygen was 7: 3 Perfect