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提出了一种性能优良的电场调制载流子存储槽栅双极型晶体管(CSTBT)。结合电场调制原理,在器件的载流子存储(CS)层引入P掺杂条,改善器件栅极下方氧化硅拐角处的电场分布,防止器件提前发生雪崩击穿,提高了器件的击穿电压。器件处于关断状态时,内部大量的空穴载流子通过CS层中未完全耗尽的P掺杂条到达发射极,抑制了CS层阻挡空穴的作用,有效提高了器件的关断速度。与传统CSTBT器件相比,改进器件的击穿电压值提高了379V,关断时间缩短了19.1%,器件性能大幅提高。
An excellent electric field modulated carrier gate trench bipolar transistor (CSTBT) is proposed. In combination with the principle of electric field modulation, a P-doped bar is introduced in the CS carrier layer to improve the electric field distribution at the corner of the silicon oxide under the gate of the device to prevent the device from avalanche breakdown in advance and improve the device breakdown voltage . When the device is off, a large amount of hole carriers inside reach the emitter through the partially depleted P doping stripe in the CS layer, which inhibits the hole blocking effect of the CS layer and effectively increases the device turn-off speed . Compared with the traditional CSTBT devices, improved device breakdown voltage increased 379V, turn-off time reduced by 19.1%, the device performance increased significantly.