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在低真空(2.3×10-3Pa)下采用射频磁控溅射法制备了ITO薄膜。溅射温度200℃,溅射气氛为氩气和氧气的混合气,溅射靶材为90%氧化铟、10%氧化锡的陶瓷靶。用场发射扫描电子显微镜和X衍射仪研究了薄膜的显微结构,用X射线光电子能谱表征了薄膜的成分。ITO薄膜在可见光范围内有较高的透射率(80%～95%)。在低工作气压(1Pa)下,氧气流量比率[O2/(O2+Ar)]越小,薄膜的透射率越高、导电性越好。在高工作气压(2Pa)下,制备得到低质量、低透射率的无定形薄膜。
The ITO film was prepared by RF magnetron sputtering under low vacuum (2.3 × 10-3Pa). The sputtering temperature was 200 ° C., the sputtering atmosphere was a mixture of argon and oxygen, and the sputtering target was a ceramic target of 90% indium oxide and 10% tin oxide. The microstructure of the films was characterized by field emission scanning electron microscopy and X-ray diffraction. The films were characterized by X-ray photoelectron spectroscopy. ITO thin film in the visible range of high transmittance (80% ~ 95%). At low working pressure (1 Pa), the smaller the oxygen flow rate [O2 / (O2 + Ar)], the higher the transmittance of the film and the better the conductivity. Under high working pressure (2 Pa), an amorphous thin film with low quality and low transmittance was prepared.