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用慢正电子束辅助以拉曼光谱方法对一批较高质量的PECVD金刚石膜的微结构进行测量研究．拉曼光谱实验结果显示,这批金刚石膜中金刚石相含量比较高,正电子湮没实验进一步从微观结构上指出各个金刚石膜之间存在很大差异,并且从缺陷角度发现各样品中缺陷尺寸和缺陷浓度不一样,造成膜质量不同．S-E曲线变化趋势反映出各样品金刚石晶体结构存在明显不同．这表明正电子湮没技术是测量金刚石膜微结构的有力手段．
A slow positive electron beam assisted Raman spectroscopy was used to measure the microstructure of a group of high quality PECVD diamond films. The results of Raman spectroscopy showed that the content of diamond phase in these diamond films was relatively high. The positron annihilation experiments further indicated that there were great differences among the diamond films from the microstructure, and found the defect size and defect in each sample from the defect angle Different concentrations, resulting in different film quality. The trend of S-E curve reflects the obvious difference of crystal structure of each sample diamond. This shows that positron annihilation technique is a powerful tool to measure the microstructure of diamond films.