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Magneto-transport properties of insulating bulk states in Bi(111) fi1 ms are systematically investigated under the parallel field(B_‖).We find that the magnetotransport of the B_‖ held is a more powerful tool to distinguish the bulk states and the surface states.A large magnetoresistance(MR) up to 20%in the B_‖ field is induced by the insulating bulk states for the suppression of the backward scattering.With the increasing thickness,a positive MR(B_‖) from magnetic induced boundary scattering appears in the semimetal films.As the thickness is reduced to 10 nm,the positive MR(B_‖) is induced by weak anti-localization from the surface states.
Magneto-transport properties of insulating bulk states in Bi (111) fi1 ms are systematically investigated under the parallel field (B_∥) .We find that the magnetotransport of the B_∥ held is a more powerful tool to distinguish the bulk states and the surface states. A large magnetoresistance (MR) up to 20% in the B_∥ field is induced by the insulating bulk states for the suppression of the backward scattering. With the increasing thickness, a positive MR (B_∥) from magnetic induced boundary stimulations in the semimetal films. As the thickness is reduced to 10 nm, the positive MR (B_∥) is induced by weak anti-localization from the surface states.