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用溶胶-凝胶旋涂法在玻璃基底上制备出Nb/SnO2复合透明导电薄膜,利用XRD,SEM,紫外—可见分光光度计,四探针电阻仪等测试方法对Nb/SnO2复合薄膜的结构和物性进行了研究.结果表明:当Nb含量小于0.99at%时,Nb/SnO2复合薄膜为较纯的四方金红石结构;复合薄膜中晶粒分布均匀,平均尺寸在5—7nm.当Nb含量小于0.99at%时,Nb/SnO2复合薄膜的电阻率先减小后增大,当Nb含量为0.37at%时,复合薄膜的电阻率降低到9.49×10-2Ω·cm.在400—700nm可见光范围内,当Nb含量小于0.99at%时,Nb/SnO2复合薄膜的透过率都在90%以上,其光学带隙在3.9—4.1eV之间;当Nb含量达到1.23at%时,可见光透过率明显降低.
Sn / SnO2 composite transparent conductive thin films were prepared on glass substrates by sol-gel spin coating. The structures of Nb / SnO2 composite thin films were characterized by XRD, SEM, UV-visible spectrophotometer and four- The results show that when Nb content is less than 0.99at%, the Nb / SnO2 composite film is relatively pure tetragonal rutile structure. The grain size distribution in the composite film is uniform with the average size of 5-7nm. When the Nb content is less than When the content of Nb is 0.37at%, the resistivity of the composite thin film decreases to 9.49 × 10-2Ω · cm. In the visible range of 400-700nm, the resistivity of Nb / SnO2 composite film first decreases and then increases. When the content of Nb is less than 0.99at%, the transmittance of Nb / SnO2 composite film is over 90% and the optical band gap is between 3.9-4.1eV. When the Nb content reaches 1.23at%, the visible light transmittance Obvious reduction.