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在p-InSb上形成n~+层有三种方法:(1)质子或(2)Si离子轰击,所用能量为60或100千电子伏,剂量为1～2×10~(15)厘米~(-2),以及(3)Q-开关Nd:YAG激光辐照。研究了其后等时退火30分钟的结果。(1)和(3)不用退火就可直接形成n~+层,(2)则最初形成p层,在200℃以上的温度下退火后变为n~+层。用(2)和(3)法获得的n~+层能耐350℃以下的退火温度,而用(1)法的在100℃以上即回复到p型。用(2)和(3)法制备的77K台面型二极管,其正向电流密度用J=1×10(-3)exp(qV/1.7kT)安/厘米~2得出,结电容与反向偏压的关系用C∞(V_D+|V|)~(-0.43)表示,扩散电势V_D=0.2伏。
There are three ways to form n ~ + layers on p-InSb: (1) Proton or (2) Si ion bombardment with energy of 60 or 100 keV and dose of 1-2 × 10-15 cm- -2), and (3) Q-switched Nd: YAG laser irradiation. The result of subsequent isochronous annealing for 30 minutes was studied. (1) and (3), an n + layer can be directly formed without annealing, and (2) a p layer is formed first and becomes an n + layer after annealing at a temperature of 200 ° C or higher. The n + layers obtained by the methods (2) and (3) are capable of being annealed to an annealing temperature of 350 ° C or lower, and are recovered to p-type at a temperature of 100 ° C or higher by the method of (1). The 77K mesa diode fabricated by (2) and (3) shows that the forward current density is given by J = 1 × 10 -3 exp (qV / 1.7kT) A / cm 2, The relationship between bias and C∞ (V_D + | V |) ~ (-0.43), the diffusion potential V_D = 0.2 volts.