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利用溅射AES,Normaski显微术和IR吸收光谱研究了在空气中用调Q红宝石激光辐照的Si(100)面.脉冲能量密度为(0.8—2.5 J·cm~(-2)),脉冲宽度～30ns.实验结果表明,辐照后的硅表面没有形成>10A的SiO_2层,氧的沾污深度只有～50A.
The Si (100) surface irradiated by Q-switched ruby laser in air was studied by sputtering AES, Normaski microscopy and IR absorption spectroscopy. The pulse energy density was (0.8-2.5 J · cm -2) Pulse width ~ 30ns.The experimental results show that there is no formation of> 10A SiO2 layer on the irradiated silicon surface, and the oxygen contamination depth is only ~ 50A.