用微波介质波导法无接触测试了生长在半绝缘衬底上的ＧａＡｓ、ＡｌｘＧａ１－ｘＡｓ外延层的微波光电导谱和横向磁阻，给出了从微波光电导谱计算少子扩散长度和从横向磁阻计算霍耳迁移率的方法，并且由此算得外延层的少于扩散长度和霍耳迁移率．本方法对被测样品的几何形状和尺寸无特殊要求，测试区域小于５×５ｍｍ２，具有无损伤、不污染的优点，并配有微机控制，测试迅速方便． The microwave photoconductivity spectra and transverse reluctance of GaAs and AlxGa1-xAs epitaxial layers grown on semi-insulating substrates were measured by microwave dielectric waveguide method without contact. The results of microwave photoconduction spectroscopy for calculating minority carrier diffusion length and transverse magnetization The method of calculating the Hall mobility is calculated, and thus less than the diffusion length and the Hall mobility of the epitaxial layer are calculated. This method has no special requirements on the geometry and size of the sample to be tested. The test area is less than 5 × 5mm2. The method has the advantages of no damage and no pollution, and is equipped with a microcomputer to control the test quickly and easily.