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涂层导体是发展77 K液氮温区强磁场下电力应用的实用化关键材料。由于缓冲层层数增加会导致控制生长、微观组织和界面结构的难度增大,所以简化缓冲层结构对涂层导体制备工艺的简化和成本的降低非常重要。本研究探索了低成本的化学溶液沉积(CSD)技术制备SrTiO_3(STO)缓冲层过程中前驱液热分解行为以及薄膜制备工艺路线对薄膜外延生长的影响,通过选取恰当的前驱液以及引入籽晶层沉积的方法最终获得了具有良好c轴织构且表面光滑的STO薄膜。
Coated conductors are the key practical materials for the development of power applications in the high magnetic field of 77 K liquid nitrogen. Because of the increased number of buffer layers that leads to increased control of growth, microstructure and interfacial structure, it is important to simplify the buffer layer structure for simplicity and cost reduction of the coating conductor preparation process. This study explored the influence of precursors thermal decomposition process and thin film preparation route on epitaxial growth of thin films during the preparation of SrTiO_3 (STO) buffer layer by low-cost chemical solution deposition (CSD) technology. By selecting proper precursors and introduction of seed crystals The method of layer deposition finally obtained an STO film with a good c-axis texture and a smooth surface.