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提出了一种高精度、低功耗、小面积的电流型CMOS基准电压源以满足非制冷红外焦平面(IRFPA)读出电路对基准电压源模块的要求。设计中采用两种分别具有正负一阶温度系数的电阻,通过对基准电压源的高阶温度系数进行补偿,获得更好的温度系数TC(Temperature Coefficient)。通过使用共源共栅结构代替传统的运放,节约了传统运放和偏置电路的功耗,并且具有出色的电源电压抑制比PSRR(Power Supply Reject Ratio)。该设计使用标准0.18μm CMOS工艺实现,工作电压3.3 V,-40~120℃温度范围内,输出基准电压温度系数约为3.7 ppm/℃,PSRR约为-78 d B@1 k Hz,在25℃时消耗电流6.3μA,消耗芯片面积仅230μm×100μm,所提出的电路是一种低功耗、节约面积的设计。
A high precision, low power consumption and small area current reference CMOS voltage source is proposed to meet the requirements of reference voltage source module for uncooled infrared focal plane (IRFPA) readout circuit. Two kinds of resistors with positive and negative first-order temperature coefficients are used in the design. By compensating the high-order temperature coefficient of the reference voltage source, a better temperature coefficient TC (Temperature Coefficient) can be obtained. By using a cascode structure instead of a conventional op amp, the power consumption of the conventional opamp and bias circuit is saved, and the PSRR (Power Supply Reject Ratio) is excellent. The design is implemented using a standard 0.18μm CMOS process with a 3.3V output voltage and a -40 ° C to 120 ° C output temperature coefficient of approximately 3.7 ppm / ° C and a PSRR of approximately -78 dB / Hz at 25 ℃ current consumption of 6.3μA, the chip area consumption of only 230μm × 100μm, the proposed circuit is a low-power, space-saving design.