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采用化学溶液沉积法 ,在Si(10 0 )衬底上制备了 (Bi0 .92 5La0 .0 75) 2 Ti2 O7薄膜。通过对其X射线衍射图谱分析表明 :用一定量的La3+ 来代替部分Bi3+ ,提高了Bi2 Ti2 O7相薄膜的稳定性。研究发现 :经过高温 (85 0℃ )退火处理后 ,该薄膜的结晶性和取向性都很好 ,[111]方向取向率为 90 %。根据XRD谱图中的 (4 4 4)衍射峰 ,计算出晶格常数a≈ 2 0 .66 。薄膜的电流电压和电容电压特性的测量结果表明 ,该薄膜具有良好的绝缘性和较高的介电常数。
A (Bi0.92 5La0.075) 2 Ti2 O7 thin film was deposited on a Si (100) substrate by chemical solution deposition. The X-ray diffraction pattern analysis showed that the Bi2Ti2O7 phase film was improved by replacing some Bi3 + with a certain amount of La3 +. The results show that the crystallinity and orientation of the film are good after the annealing at high temperature (85 0 ℃), and the orientation in the [111] direction is 90%. According to the diffraction peaks of (4 4 4) in the XRD spectrum, the lattice constant a≈20.66 was calculated. The measurement of the current and voltage characteristics of the film shows that the film has good insulation and high dielectric constant.