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介绍了采用镓铝双质掺杂制造快速晶闸管的设计要点和关键工艺。根据器件的特性要求,优化设计了基区结构参数和门极-阴极图形,采用了高级交叉指状辅助门极结构,合理确定了短路发射极的尺寸及分布形式。采用固态源闭管式扩散工艺,镓铝双质掺杂一次连续完成,扩散参数具有良好的均匀性和重复性,获得了较理想的杂质浓度分布,并采用12 MeV电子辐照技术控制少子寿命。研究了镓铝双质掺杂对快速晶闸管参数的影响,分析和讨论了器件特性得到改善的原理。研究结果表明,采用该掺杂技术制造的快速晶闸管,电气参数的一致性明显提高,综合性能明显改善,具有良好的阻断特性、门极特性和动态特性。
The design key points and the key techniques of manufacturing the fast thyristor by using gallium aluminum double doping are introduced. According to the characteristics of the device, the basic structure parameters and the gate-cathode patterns were optimized and the advanced interdigitated auxiliary gate structures were adopted. The size and distribution of the short-circuit emitters were determined reasonably. Solid state source closed-tube diffusion process was used to complete the doping of Gallium-aluminum double-doping. The diffusion parameters showed good uniformity and repeatability, and the ideal impurity concentration distribution was obtained. The 12-MeV electron irradiation . The influence of Ga-Al double doping on the parameters of fast thyristor was studied, and the principle of improving the device characteristics was analyzed and discussed. The results show that the fast thyristor fabricated by this doping technique has obvious improvement of the electrical parameters, the overall performance is obviously improved, the good blocking characteristics, the gate characteristics and the dynamic characteristics are obtained.