随着IC集成度、速度、可靠性的增高,人们对难熔金属及其硅化物的研究日益广泛.这类材料具有低电阻、高熔点和低的接触电阻等优点,用作栅、互连线和接触材料,克服多晶硅电阻率高(重掺多晶硅ρ=1000μΩ-cm)而导致的电路速度降低;铝熔点低导致的电迁移和结穿透;器件尺寸减小而导致的寄生电阻效应等弊病.一、硅化物的形成 With the increase of IC integration, speed and reliability, the research of refractory metal and its silicide has become more and more widely.These materials have the advantages of low resistance, high melting point and low contact resistance, Line and contact materials to overcome circuit speed reduction due to high polysilicon resistivity (heavily doped polysilicon ρ = 1000μΩ-cm); electromigration and junction penetration due to low aluminum melting point; parasitic resistance effects due to reduced device size, etc. Ills. First, the formation of silicide