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本文利用558型X光电子能谱(XPS)对CdSe/Ti光电极进行了研究,详细考察了在不同条件下制备的电极表面组成及结构特征,并采用Ar~+溅射剥蚀的方法,对表面氧化膜作了深度分析,结果表明:在500℃空气中烧结制成的电极,以固熔体存在的CdSe表面层有部分镉和硒被氧化,生成CdO和SeO_2,氧化层厚度约有90A。金属钛被氧化为TiO_2,约在24A深的内表层,TiO_2和Ti共存,其厚度不少于1600A 氮气中500℃烧制成的电极,镉和硒基本上不被氧化,仍以固熔体形式存在。在少量氧存在下,钛被氧化为TiO_2的厚度约有15A,据此讨论了电极制备条件对光电效应的影响,提出了一些看法。
In this paper, the CdSe / Ti photoelectrode has been studied by 558 X-ray photoelectron spectroscopy (XPS). The surface composition and structure of the electrode have been investigated in detail. Ar + The results showed that some cadmium and selenium in the surface layer of CdSe existing in solid solution were oxidized to form CdO and SeO_2, and the thickness of oxide layer was about 90A. Titanium metal is oxidized to TiO_2, about 24A deep in the inner surface, TiO_2 and Ti coexist, the thickness of not less than 1600A nitrogen fired at 500 ℃ electrodes, cadmium and selenium are not substantially oxidized, still solid solution Form exists. In the presence of a small amount of oxygen, titanium is oxidized to TiO_2 thickness of about 15A, thus discussing the electrode preparation conditions on the photoelectric effect, put forward some views.