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本文研究了ＰＥＣＶＤ抗反射膜ＳｉＮ的热退火特性。测量结果表明，经过制备ＧａＡｓ透射光阴极的热压粘结工艺的热退火处理ＳｉＮ薄膜的折射率增加了约０．１，薄膜厚度减少了约１５％。ＩＲ透射谱分析表明，这是由于退火后膜中Ｈ的释放而引起化学键比例变化所致。此项工作为透射式ＧａＡｓ光阴极抗反射膜的设计和制备提供了依据。
In this paper, the thermal annealing characteristics of PECVD anti-reflection film SiN were studied. The measurement results show that the refractive index of the SiN film is increased by about 0.1 and the film thickness is reduced by about 15% after the thermal annealing process of the hot press bonding process for producing a GaAs transmissive photocathode. IR transmission spectrum analysis shows that this is due to the change of the chemical bond due to the release of H in the film after annealing. This work provides a basis for the design and preparation of transmissive GaAs photocathode antireflection coatings.