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本文主要介绍利用SEM对几种介质薄膜厚度的直接测定,并讨论了其应用的范围及测量精度,在集成电路的研制工艺中,需要研制多种同质和异质的介质膜,如氮化硅、二氧化硅,多晶和单晶硅、金属铝等。而通常用光学测量这些膜厚并相应地建立了直接或间接的多种方法,在此基础上我们利用SEM具有测量精度高、图象清晰等特点,建立了同时测量多种膜厚和非破坏的样品倾斜法,能谱特征峰比例法直接测定膜厚度,精度可达10％以内,方法简易、快速、精度高。尤其是可检测厚度的均匀性。实践表明,均能满足与符合工艺要求。
This article mainly introduces the direct determination of the thickness of several dielectric films by SEM, and discusses its range of applications and measurement accuracy. In the development of integrated circuits, we need to develop a variety of homogeneous and heterogeneous dielectric films, such as nitriding Silicon, silicon dioxide, polycrystalline and monocrystalline silicon, aluminum metal, and the like. However, these film thicknesses are generally measured optically and correspondingly direct or indirect methods are established. Based on this, we use SEM to measure the film thickness and non-destructive Of the sample tilt method, the ratio of energy spectrum peak direct determination of membrane thickness, accuracy up to 10%, the method is simple, fast, high precision. In particular, the uniformity of the thickness can be detected. Practice shows that both meet and meet the technical requirements.