在Si-SiO_2界面上,有两种电活性中心-界面俘获和固定电荷,它们会影响集成电路中MOS场效应管和双极晶体管的性能和稳定性。本文简要叙述界面俘获和固定电荷的特性,这些电活性中心如何影响硅器件的性能,以及大量控制这些电活性中心的经验方法。这些方法已能成功地控制界面俘获和固定电荷,使之对若干类型的集成电路的性能和稳定性不起影响。 At the Si-SiO 2 interface, there are two types of electro-active centers-interface trapping and fixed charges that affect the performance and stability of MOS FETs and bipolar transistors in integrated circuits. This article briefly describes the characteristics of interfacial trapping and fixed charges, how these active centers affect the performance of silicon devices, and a vast array of empirical approaches to control these active sites. These methods have succeeded in controlling the interface capture and pinning of charges so as not to affect the performance and stability of several types of integrated circuits.