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采用反应溅射法,室温下,在Cu/Ti/SiO2/Si衬底上制备了氧化钒(VOx)薄膜,并对薄膜进行450℃、30min的真空退火处理。采用X-射线衍射(XRD)、原子力显微镜(AFM)对薄膜的结晶取向和表面形貌进行了表征,通过半导体参数分析仪对薄膜的电开关特性进行测试,并利用导电原子力显微镜(CAFM)对VOx薄膜的导电机制进行了探索。测试结果表明,VOx薄膜在Cu/Ti/SiO2/Si衬底取向生长,并且是以V2O5为主的V6O13和V2O5的混合物,薄膜表面颗粒大小均匀(30~40 nm),粗糙度为2.4 nm。电学测试结果表明薄膜具有较低(Vset=0.72 V,Vreset=0.39 V)的开关电压,开关电阻的转变倍率约3个数量级,经CAFM测试发现,VOx薄膜导电态中有导电细丝,结合VOx/Cu界面态及Cu离子快扩散特性,认为VOx薄膜导电态主要是Cu离子在薄膜中扩散形成的导电细丝所致。
VO2 films were prepared on Cu / Ti / SiO2 / Si substrates at room temperature by reactive sputtering. The films were annealed at 450 ℃ for 30min. The crystal orientation and surface morphology of the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical characteristics of the films were tested by semiconductor parameter analyzer. The conductivity of the films was measured by using the atomic force microscopy (CAFM) VOx film conductive mechanism was explored. The results show that the VOx thin film grows on Cu / Ti / SiO2 / Si substrate and is a mixture of V6O13 and V2O5 based on V2O5. The surface of the film is uniform in size (30-40 nm) with a roughness of 2.4 nm. Electrical test results show that the film has a low (Vset = 0.72 V, Vreset = 0.39 V) of the switching voltage, the switching resistance of the conversion rate of about 3 orders of magnitude, the CAFM test found VOx film conductive state conductive filaments, combined VOx / Cu interface state and the rapid diffusion of Cu ions, it is considered that the conductive state of the VOx film is mainly caused by the conductive filaments formed by the diffusion of Cu ions in the film.