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重掺磷衬底上硅外延片是制作集成电路开关电源的肖特基二极管和场控高频电力电子器件的首选产品。重掺磷衬底外延片可以大幅降低压降中半导体部分引起的压降所占的比例。介绍了重掺磷外延片的一种实用生产技术,在高浓度衬底外延后失配现象、杂质外扩抑制方法、减少外延过程中衬底磷杂质的挥发等方面进行了研究。在研究的基础上使用CSD公司的EpiPro5000型外延设备进行工艺试验,采用盖帽层分层生长、变流量赶气和低温度生长等工艺条件控制磷杂质的扩散和挥发,从而减少自掺杂效应,获得良好的电阻率均匀性和陡峭的外延层过渡区。试验结果已成功应用于大规模生产,得到了用户认可。
Silicon epitaxial wafers on heavily doped substrates are the products of choice for Schottky diodes and field-controlled high-frequency power electronics for the fabrication of integrated circuit switching power supplies. The heavily-doped substrate epitaxial wafer can drastically reduce the proportion of the voltage drop caused by the semiconductor portion in the voltage drop. A practical production technology of heavily doped phosphorus epitaxial wafers was introduced in the aspects of epitaxial mismatch of high concentration substrate, suppression of impurity diffusion and reduction of volatilization of substrate phosphorus during epitaxial growth. On the basis of the research, CSD company EpiPro5000 epitaxial equipment was used to carry out the process test. The diffusion and volatilization of phosphorus impurities were controlled by the cap layer stratified growth, the variable flow rate and the low temperature growth to reduce the self-doping effect, Get good resistivity uniformity and steep transition zone of epitaxial layer. The test results have been successfully applied to large-scale production, has been approved by the user.