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利用太赫兹 (THz)时域光谱技术研究了不同掺杂的Zn0 95 Cd0 0 5 Te〈110〉单晶产生THz辐射的特性 .实验发现 ,当晶体的直流电阻率 ρ >10 2 Ω·cm时 ,晶体产生THz辐射的效率随着晶体电阻率的增加而增加 ,但当电阻率 ρ >10 6Ω·cm时 ,晶体产生THz辐射的效率出现饱和甚至可能下降 .光谱测量结果表明 ,此类晶体在THz波段的透过率基本上取决于其低频电阻率 ,但除了晶体对THz辐射的吸收这一因素外 ,其色散性质的变化对晶体的THz辐射性能也有重要的影响 .因此 ,当ZnCdTe晶体用于THz辐射产生和探测时 ,仅仅用材料的Hall电阻率不能完全表征器件的性能
The properties of THz radiation generated by different doping Zn0 95 Cd0 0 5 Te <110> single crystals were studied by using THz time-domain spectroscopy. It was found that when the direct current resistivity of crystal was ρ> 10 2 Ω · cm , The efficiency of crystal producing THz radiation increases with the increase of crystal resistivity, however, the saturation or even decrease of the efficiency of crystal producing THz radiation appears when the resistivity ρ> 10 6Ω · cm. Spectroscopic measurements show that the The transmittance in the THz band basically depends on the low frequency resistivity, but besides the factors that the crystal absorbs the THz radiation, the change of the chromatic dispersion also has an important influence on the THz radiation performance of the crystal.Therefore, when the ZnCdTe crystal is used When THz radiation is generated and probed, the device’s performance can not be fully characterized solely by the Hall’s resistivity of the material