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用二维分析模型和计算机模拟研究了深耗尽绝缘层上硅MOSFET中的短沟道效应。通过耗尽膜的垂直电场对穿过源和漏区的水平电场有很大的影响,减薄硅膜的厚度就可以大大地削弱短沟道效应。
The short channel effect in deep depleted silicon-on-insulator MOSFETs was investigated using two-dimensional analytical models and computer simulations. The vertical electric field through the depletion film has a great influence on the horizontal electric field across the source and drain regions. Thinning the thickness of the silicon film can greatly weaken the short channel effect.