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Transparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel route.The physical and chemical changes during thermal treatment were analyzed by TG-DSC spectra and the crystallization quality was characterized by XRD patterns.The optimized preheating and post-heating temperatures were determined at～420°C and～530°C,respectively.From thermodynamic and kinetics views,we investigated the mechanism of orientation growth with(002) plane parallel to the substrates.The surface morphologies of the films,post-heated at 420°C,450°C,530°C and 550°C,respectively,were observed by SEM micrographs.The film post-heated at 530°C shows a homogenous dense microstructure and exhibits the minimum sheet resistance of 140Ω/Sq.The visible optical transmittance of all the films is beyond 90%.In addition,the annealing treatment in vacuum can contribute greatly to the electrical conductivity.
Transparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel route. The physical and chemical changes during thermal treatment analyzed by TG-DSC spectra and the crystallization quality were characterized by XRD patterns. The optimized preheating and post-heating temperatures were determined at ~ 420 ° C and ~ 530 ° C, respectively. From thermodynamic and kinetics views, we investigated the mechanism of orientation growth with (002) plane parallel to the substrates. morphologies of the films, post-heated at 420 ° C, 450 ° C, 530 ° C and 550 ° C, respectively, were observed by SEM micrographs. The film post-heated at 530 ° C shows a homogenous dense microstructure and exhibits the The minimum sheet resistance of 140 Ω / Sq. The visible optical transmittance of all the films is beyond 90%. In addition, the annealing treatment in vacuum can contribute greatly to the electrical conductivity.