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用高频C—V和准静态C-V技术研究了低温湿氮退火对SiO_z—Si界面的影响。结果表明,铝淀积后并在铝腐蚀之前的460℃湿氮退火有效地减少了表面电荷和界面态密度。还比较了铝淀积前退火、铝腐蚀前退火和铝腐蚀后退火的效果,证明铝腐蚀前退火给出最小的表面电荷和界面态密度。对结果和退火机理进行了讨论。
The effect of low-temperature wet-nitrogen annealing on the interface of SiO_z-Si was studied by high-frequency C-V and quasi-static C-V technique. The results show that annealing and wet-nitrogen annealing at 460 ℃ after aluminum deposition effectively reduce the surface charge and interface state density. The effect of annealing before aluminum deposition, annealing before aluminum etching, and annealing after aluminum corrosion was also compared, demonstrating that annealing before aluminum corrosion gives the smallest surface charge and interface state density. The results and annealing mechanisms were discussed.