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利用质量分离低能离子束外延法，在Si（111）上生长出了硅化钻薄膜．表面微结构及表面组分、化学价态的分析测试表明，此生长工艺已获得了无针孔的高品质单晶硅化钴薄膜．通过反应外延后做后退火和不做后退火样品的对比测试的结果，对这一薄膜生长的机理进行了探讨分析．
A silicided diamond film was grown on Si (111) by mass separation of low energy ion beam epitaxy. Surface microstructure and surface composition, chemical valence analysis test showed that this growth process has been obtained without pinhole high quality monocrystalline cobalt silicide film. The mechanism of this film growth was investigated by the comparison of the results of the comparative tests on the post-annealed and post-annealed samples after reaction epitaxy.