基于p-Laplace算子的小波域图像修补模型

来源 :自动化学报 | 被引量 : 0次 | 上传用户:jiaosai
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
The problem of filling in missing or damaged wavelet coefficients is considered in this paper. Chan, Shen, and Zhou have proposed two total variation (TV) wavelet inpainting models to solve this problem. The main benefit of TV model is that it can keep the edges very well, but this method suffers from the staircase effect. To overcome this defect, we analyze the physical characteristics of TV model and p-Laplace operator in local coordinates, and explain that diffusion performance of p-Laplace is superior to that of TV model in essence. Afterwards, an inpainting model based on p-Laplace operator for damaged wavelet coefficients is presented. This new model can effectively reduce the staircase effect in TV model whereas it can still keep sharp edges as well as TV model. Experiment results show that better inpaingting quality can be achieved with much less computing time with our model.
其他文献
As in reading teaching, schema theory has long been taking a dominant part. According to this theory, English teachers can help the students to call up their pr
When you mention lexicology, absolutely it is a branch of linguistics, inquiring into the origins and meanings of words. The lexicologist McCarthy (1990) have g
采用时域有限差分(FDTD)法计算了含色散介质一维光子晶体微腔的透射谱,研究了缺陷模的频移特性。通过与无色散光子晶体微腔透射谱相比较,发现了介质色散导致的缺陷模频移现象
提出了利用分子束外延方法生长In0.5Ga0.5As/In0.5Al0.5As应变耦合量子点,并分析量子点的形貌和光学性质随GaAs隔离层厚度变化的特点。实验结果表明,随着耦合量子点中的GaAs
二维单斜点阵光子晶体在光学聚焦器件及光子晶体波导中有重要的应用价值,详细讨论了二维单斜点阵光子晶体的第一布里渊区及带隙计算,并与常规方法计算得出的二维正三角形晶格
研究了二能级原子与灰体场相互作用过程中原子和光场线性熵的演化规律,讨论了原子初态、失谐量、入射场的强度、腔体吸收系数及其温度对原子和光场线性熵的影响.
报道了Tm3+/Ho3+共掺的镓铋酸盐玻璃14Ga2O3-25Bi2O3-20GeO2-31PbO-10PbF2玻璃1.47μm(S波段)发光和能量传递特征,应用Judd-Ofelt理论计算了玻璃的强度参数Ω,(t=2,4,6),自发
以芳酰肼为原料,合成了一系列3-巯基-5-芳基-1,2,4-三唑、2-巯基-5-芳基-1,3,4-噁二唑和2-巯基-5-芳基-1,3,4-噻二唑,并通过硫原子对3-溴-2-氧代-苯并氮杂(艹卓)3-位上的亲核
研究发现,氟喹诺酮类药物对可溶性Mn(Ⅳ)-甲醛化学发光体系有强烈的增敏作用,结合流动注射技术,建立了3种氟喹诺酮类药物诺氟沙星、氧氟沙星和环丙沙星的流动注射化学发光新
就蓝宝石衬底上制备的A1GaN/GaN场板(field plate)HEMT器件、常规HEMT器件性能进行了分析对比.结果证明两种结构的器件直流参数变化不大,但是采用场板后器件的击穿电压从52 V