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硅外延淀积工艺的重点在于生长突变结和改善外延层的径向厚度和电阻率均匀性。外延层的载流子迁移率和寿命取决于晶体完整性。衬底表面及其晶向对外延淀积有影响。讨论了有利于得到无缺陷的外延硅,有利于集成电路制备,诸如结隔离和介质隔离的方法。最后给出了有关汽相淀积同质外延硅的参考文献。
The focus of the silicon epitaxial deposition process is to grow a mutant junction and to improve the radial thickness and resistivity uniformity of the epitaxial layer. The carrier mobility and lifetime of the epitaxial layer depend on the crystal integrity. The substrate surface and its orientation affect the epitaxial deposition. Discussed is a method that favors the fabrication of defect-free epitaxial silicon that is beneficial for integrated circuit fabrication, such as junction isolation and dielectric isolation. Finally, the references of homoepitaxial silicon deposited by vapor deposition are given.