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最近日本 NTT 武藏野电气通信研究所研制出一种发射波长为1.55μm 的沟道衬底隐埋异质结构 InGaAsP/InP 激光器。这种激光器的制备是采用通常的液相外延方法在 n 型(100)面 InP 衬底上首先生长一层n 型 InP,接着生长一层 InGaAsP 有源层,继之生长一层 p-InP 层,最后生长一层 n-InGa-AsP 顶层。衬底放入坩埚之前表面上用 Br-甲醇溶液沿〔100〕取向刻蚀沟道。沟道深度为1.0～2.0μm,宽约5μm。n-InP 填充层(filling layer)的生长温度为641℃,降温速度为0.8℃/
Recently, NTT Musashino Electric Telecommunications Research Institute of Japan developed a buried heterostructure InGaAsP / InP laser with a wavelength of 1.55μm. The laser was prepared by first growing an n-type InP on an n-type (100) plane InP substrate by conventional liquid-phase epitaxy, followed by growing an InGaAsP active layer followed by growing a p-InP layer , And finally grow a n-InGa-AsP top layer. The substrate was etched in a [100] orientation with a Br-methanol solution on the surface of the substrate before it was placed in the crucible. Channel depth of 1.0 ~ 2.0μm, width of about 5μm. The growth temperature of the n-InP filling layer was 641 ° C., the cooling rate was 0.8 ° C./s,