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主要介绍了一种Cu的CELT加工的化学刻蚀体系和捕捉体系 ,并通过控制刻蚀时间、刻蚀电流、刻蚀剂浓度、捕捉剂浓度等实验参数和优化电化学模板的制作工艺 ,以规整的齿状结构为模板 ,在Cu的表面实现了三维微结构的复制加工 ,得到了与齿状结构模板互补的三维微结构 ,用SEM和AFM对实验结果进行了表征 ,表征结果证明约束刻蚀剂层技术在金属三维加工方面的可行性和潜在优势。金属Cu由于具有优良的导热导电性能以及很好的延展性 ,在微系统 (也称微机电系统 )中应用广泛 ,因此对Cu的刻蚀加工对微系统技术的发展具有重要的意义。约束刻蚀剂层技术 (ConfinedEtch antLayerTechnique简称CELT)作为一种新型的微加工技术[1] ,能够加工复制出复杂三维结构 ,到目前为止 ,该技术已成功应用于Si、GaAs等材料微结构的复制加工[2 ,3] 。
A kind of chemical etching system and capturing system for Cu CELT processing are introduced. By controlling the etching time, the etching current, the concentration of etchant, the concentration of trapping agent, and the optimization of the fabrication process of the electrochemical template, The regular dentate structure is used as the template, the three-dimensional microstructure is replicated on the surface of Cu, and the three-dimensional microstructure complementary to the dentate structure template is obtained. The experimental results are characterized by SEM and AFM. Etch layer technology in the three-dimensional metal processing feasibility and potential advantages. Due to its excellent thermal and electrical conductivity and good ductility, Cu metal is widely used in micro-systems (also called micro-electromechanical systems). Therefore, the etching of Cu is of great significance to the development of micro-system technology. As a new micro-fabrication technique, Confined Etch-based Anti-Trunk Technology (CELT) can process complex three-dimensional structures and has been successfully applied to the microstructure of Si, GaAs and other materials Copy processing [2, 3].