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Ⅲ－Ⅴ族化合物半导体的表面钝化是一个长期未能完满解决的问题．８０年代后期出现的硫钝化技术给钝化研究注入了活力．文章对有关硫钝化技术使Ⅲ－Ⅴ族化合物半导体器件性能得到的改善以及所存在的问题进行了综述．
Surface passivation of III-V compound semiconductors is a problem that has not been satisfactorily solved for a long time. Sulfur deactivation, which occurred in the late 1980s, infused vitality into passivation research. This article reviews the improvement and the problems existing in the performance of the III-V compound semiconductor devices related to the sulfur passivation technology.