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化合物半导体场效应晶体管做为微波低噪声放大器是很有希望的,然而在诸如GaAs和InP这样的材料中谷间散射对噪声性能的影响仍然是个问题。谷间散射是导带中获得相当高速度的主能带上的电子随机地激发到速度低得多的次能带上。此外,由于速度过冲,化合物半导体FET的微波增益也受到谷间散射的影响。速度过冲是这样一种现象,即电子通过一个短沟道器件的部分或整个渡越时间里,其速度超过从平衡速度与电场关系曲线中对特定电场应得到的速度值。本文的目的是确定这些现象对化合物半导体FET的噪声性能极限的影响;比较GaAs和InP器件可望的最终噪声性能;以
Compound semiconductor field effect transistors are promising as microwave low noise amplifiers, however the effect of gully scattering on noise performance in materials such as GaAs and InP remains a problem. The valley scattering is the electron on the main energy band that achieves a rather high velocity in the conduction band randomly excited to much lower sub-bands. In addition, the microwave gain of the compound semiconductor FETs is also affected by the intergranular scattering due to the speed overshoot. Speed overshoot is a phenomenon in which electrons pass through part of a short-channel device or the entire transit time exceeds the speed value that should be obtained for a particular electric field from the equilibrium speed vs. electric field. The purpose of this paper is to determine the effect of these phenomena on the noise performance limits of compound semiconductor FETs. To compare the expected final noise performance of GaAs and InP devices,