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研究了薄膜沉积方法,基于空心阴极金属溅射,在基材附近提供反应气体。工作气体和携带溅射原子通过一个狭长通道从阴极出来,这样,反应气体被阻止到达靶面。用Cu靶和脉冲电源激励,研究了阴极的基本运作。研究包括沉积率对电源、压强、气体流量和膜厚分布的依存关系,以及膜电阻率作为基材上的状态函数。用模型进行计算气体的速度分布和在腔内的压强,Al2O3膜是在氧的活性环境下溅射一个Al靶获得的,必须指出只要极少量氧气通过阴极就能氧化(中毒)靶,而外面大量氧气完全不会影响靶,在后者模式下实现了非常稳定的放电且易形成的Al2O3薄膜。利用该方法制备透明的ZnO导电膜,掺杂Al或B,达到了高沉积率,且在适当氧流量下得到了低的膜电阻率。同时,制备了高迁移率的In2O3:Mo透明导电膜,电阻率仅有1.9×10-4Ω·cm。给出了空心阴极的比例关系、沉积效率,比较了磁控溅射和直线的活性环境空心阴极溅射。
Thin film deposition methods were studied, based on hollow-cathode metal sputtering, to provide reactive gas near the substrate. The working gas and sputter-bearing atoms exit the cathode through a narrow channel so that the reactive gas is prevented from reaching the target. With Cu target and pulsed power excitation, the basic operation of the cathode was studied. The study includes the dependency of deposition rate on power supply, pressure, gas flow and film thickness distribution, and the film resistivity as a function of state on the substrate. Using a model to calculate the gas velocity distribution and pressure in the chamber, the Al2O3 film is obtained by sputtering an Al target in an oxygen-reactive environment. It must be pointed out that a very small amount of oxygen can be oxidized (poisoned) Large amounts of oxygen do not affect the target at all, and in the latter mode a very stable, well-discharged and easily formed Al2O3 film is achieved. Using this method, a transparent ZnO conductive film is prepared, doped with Al or B to achieve a high deposition rate and a low film resistivity at a suitable oxygen flow rate. At the same time, a high mobility In 2 O 3: Mo transparent conductive film was prepared, with a resistivity of only 1.9 × 10 -4 Ω · cm. The relationship between hollow cathode ratio and deposition efficiency is given. Magnetron Sputtering and linear active hollow cathode sputtering are compared.