电力电子器件发展直接带动了大功率变流器水平的整体提升,并促进和推动了电力电子技术和应用的迅速发展。碳化硅(SiC)作为当前国际上最先进的第三代新型半导体材料,具有宽带隙、高临界击穿电场、高热导率、高载流子漂移速度等特点。与传统的硅材料器件相比,SiC器件可减少能耗75%,大幅降低设备成本并提高系统可靠性,可广泛应用于国民经济的各个领域。 The development of power electronics directly led to the overall upgrading of high-power converter level, and promoted and promoted the rapid development of power electronics technology and applications. As the most advanced third generation semiconductor material in the world, silicon carbide (SiC) has wide band gap, high critical breakdown electric field, high thermal conductivity and high carrier drift speed. Compared with traditional silicon material devices, SiC devices can reduce energy consumption by 75%, greatly reduce equipment costs and improve system reliability, and can be widely used in various fields of national economy.