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采用全息光刻和湿法腐蚀光栅技术,成功制备了表面二阶金属光栅宽条型分布反馈(DFB)半导体激光器,无需二次外延生长过程,实现了宽接触室温直流下大范围稳定单纵模工作。腔面未镀膜器件,在脉冲工作条件下,注入电流为2.28A时,单面输出功率大于600mW,斜率效率达0.37mW/mA,功率效率大于11%。在连续电流注入下,当注入电流为1.6A时,单面输出功率大于200mW,光谱线宽小于0.8nm,波长随电流的调谐系数最小为0.43nm/A;注入电流为1.0A时,水平远场发散角为2.1°。
The surface second-order metal grating wide-area distributed feedback (DFB) semiconductor laser has been successfully fabricated by holographic lithography and wet-etching grating technology without the need of secondary epitaxial growth. The wide-range stable single longitudinal mode jobs. Cavity surface uncoated devices, under the pulse operating conditions, the injection current of 2.28A, single-sided output power of more than 600mW, slope efficiency of 0.37mW / mA, power efficiency greater than 11%. Under continuous current injection, when the injection current is 1.6A, the single-side output power is more than 200mW, the spectral linewidth is less than 0.8nm, and the minimum tuning coefficient of wavelength with current is 0.43nm / A; when the injection current is 1.0A, The field divergence angle is 2.1 °.