论文部分内容阅读
用射频溅射方法，在不同工作气体（纯Ａｒ和Ａｒ＋１０％Ｏ＿２）和不同基片偏压（－３０Ｖ到－１８０Ｖ，间隔－３０Ｖ）下，由烧结Ａｌ＿２Ｏ＿３靶材制备Ａｌ＿２Ｏ＿３薄膜。测试了样品的介电强度和沉积速率，对部分样品的结构和成份分别用ＸＰＳ和Ｘ射线进行了分析。结果表明：薄膜均呈非晶态；在两种工作气体中，随着基片负偏压的升高，沉积速率和介电强度均下降，但在－６０Ｖ偏压时，介电强度具有最大值。含氧的工作气体导致沉积速率下降，但提高了介电强度。在含氧和－６０Ｖ偏压下，Ａｌ＿２Ｏ＿３薄膜的平均介电强度为３．４６ＭＶ／ｃｍ。纯氩气氛中制备的Ａｌ＿２Ｏ＿３薄膜是缺氧的，而含氧的工作气体可使薄膜中的氧含量提高。
Al 2 O 3 thin films were prepared from sintered Al 2 O 3 targets by radio frequency sputtering at different working gases (pure Ar and Ar + 10% O 2) and different substrate bias voltages (-30V to -180V, with an interval of -30V). The dielectric strength and deposition rate of the samples were tested. The structure and composition of some samples were analyzed by XPS and X-ray. The results show that the films are amorphous. In both working gases, the deposition rate and dielectric strength decrease with the increase of the substrate negative bias voltage. However, at -60 V bias, the dielectric strength is the largest value. Oxygen-containing working gas results in a decrease in deposition rate, but increases dielectric strength. The average dielectric strength of Al 2 O 3 thin films was 3.46 MV / cm at oxygen and -60 V bias. Al 2 O 3 thin films prepared in a pure argon atmosphere are oxygen deficient while oxygen containing working gases can increase the oxygen content in the thin films.