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作者选取在非晶硅晶化温度附近(550～800℃)用控制生长温度的办法制备出具有不同晶粒大小的多晶与非晶硅薄膜.在100～700K温度范围内测量了直流电导率随温度的变化.随着晶粒尺度的变化在logσ～1/T曲线图中呈现出2～4种导电过程.作者分析了晶粒尺度对导电过程的作用.
The authors selected polycrystalline and amorphous silicon films with different grain sizes by controlling the growth temperature near the crystallization temperature of amorphous silicon (550 ~ 800 ℃). The DC conductivities were measured in the temperature range of 100 ~ 700K With the temperature changes, with the grain size changes in the logσ ~ 1 / T curve shows two to four kinds of conductive process.The author analyzes the grain size of the conductive process.