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本文利用俄歇能谱和红外吸收谱研究了硅中O~+(200keV,1.8×10~(18)/cm~2)和N~+(180keV,4×10~(17)/cm~2)共注入、并经1200℃、2h退火后所形成的绝缘埋层的微观结构及其光学性质。结果表明:O~+和N~+共注入所形成的绝缘埋层是由SiO_2相和不饱和氧化硅态组成;在氧化硅埋层的两侧形成氮氧化硅薄层;表面硅-埋层的界面和埋层-体硅的界面的化学结构无明显差异。通过对波数范围在5000—1700cm~(-1)的红外反射谱的计算机模拟,得到了该绝缘埋层的折射率、厚度等有关的参数值,这些结果与离子背散射谱的分析结果相一致。本文还讨论了绝缘埋层的形成特征。
In this paper, the effects of O ~ + (200keV, 1.8 × 10-18 / cm ~ 2) and N ~ + (180keV, 4 × 10 ~ (17) / cm ~ ) Were implanted and annealed at 1200 ℃, 2h after the formation of the insulating buried microstructure and optical properties. The results show that the buried insulating layer formed by O ~ + and N ~ + co-implantation is composed of SiO_2 phase and unsaturated SiO_2 state; a thin layer of silicon oxynitride is formed on both sides of the buried silicon oxide layer; Of the interface and buried layer - body silicon interface chemical structure no significant difference. Through the computer simulation of the infrared reflection spectrum with the wave number in the range of 5000-1700cm -1, the parameters related to the refractive index and the thickness of the buried insulating layer were obtained. These results are in good agreement with those of the ion backscattering spectroscopy . This article also discusses the formation characteristics of buried insulation.