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为了满足衰减器低成本、小尺寸和可重用的发展需求,提出一种基于π型多晶硅电阻网络的宽频带(0~20GHz)片上衰减器。对精确控制多晶硅方块电阻(40~400Ω/sq)进行研究,通过控制硼B离子的掺杂浓度(5×1018~1.4×1020cm-3)和热退火条件(950~1 050℃,10~30min),得出薄膜方块电阻随工艺条件的变化规律,方阻误差小于4%。结合片上衰减器的尺寸需求选择方阻,设计了10和20dB片上衰减器,采用HFSS三维建模软件对器件进行仿真优化。仿真结果表明:在0~20GHz内,10dB衰减器的衰减精度为0.26dB,电压驻波比(VSWR)小于1.13;20dB衰减器的衰减精度为0.04dB,VSWR小于1.29。电阻网络的面积均为265μm×270μm,衰减器尺寸小于1 000μm×800μm。所设计的片上衰减器精度高,适用于微波测试仪器前端。
In order to meet the demand of low cost, small size and reusable attenuator, a wide band (0 ~ 20GHz) on-chip attenuator based on π-type polysilicon resistor network is proposed. The control of the resistance of polycrystalline silicon block (40 ~ 400Ω / sq) was carried out by controlling the doping concentration of boron ions (5 × 1018 ~ 1.4 × 1020cm-3) and the thermal annealing conditions (950 ~ 1050 ℃, 10 ~ 30min ), We can get the change law of film square resistance with the process conditions, the square resistance error is less than 4%. With the selection of the square resistance of the on-chip attenuator, the 10- and 20-dB on-chip attenuators were designed and the HFSS 3D modeling software was used to simulate and optimize the device. The simulation results show that the attenuation of 10dB attenuator is 0.26dB and the VSWR is less than 1.13 in 0 ~ 20GHz. The attenuation of 20dB attenuator is 0.04dB and VSWR is less than 1.29. The area of the resistor network is 265μm × 270μm, the attenuator size is less than 1000μm × 800μm. The designed on-chip attenuator has high precision and is suitable for the front end of microwave test equipment.