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采用射频磁控溅射法在石英衬底和Si衬底上分别生长了Er2O3,Tm2O3和Yb2O3三种稀土氧化物薄膜。分别利用光学方法和X射线光电子能谱测量法对以上三种稀土氧化物的禁带宽度进行了测量,并将测量结果进行了对比研究。采用光学方法测量的Er2O3,Tm2O3和Yb2O3的带隙分别是(6.3±0.1),(5.8±0.1)和(7.1±0.1)eV;而采用X射线光电子能谱法测量的这三种材料的禁带宽度分别为(6.2±0.2),(6.0±0.2)和(6.9±0.2)eV。两种测量结果的对比分析表明:在误差允许的范围内,利用X射线光电子能谱方法测量稀土氧化物的禁带宽度是可行的。
Three kinds of rare earth oxide films, Er2O3, Tm2O3 and Yb2O3, were grown on quartz substrate and Si substrate by RF magnetron sputtering. The forbidden band widths of the above three kinds of rare earth oxides were measured by optical method and X-ray photoelectron spectroscopy respectively, and the measurement results were compared. The band gaps of Er2O3, Tm2O3 and Yb2O3 measured by optical method were (6.3 ± 0.1), (5.8 ± 0.1) and (7.1 ± 0.1) eV, respectively. The bandgaps of these three materials measured by X-ray photoelectron spectroscopy The band widths were (6.2 ± 0.2), (6.0 ± 0.2) and (6.9 ± 0.2) eV, respectively. The comparative analysis of the two measurements shows that it is feasible to measure the forbidden band width of rare earth oxide by X-ray photoelectron spectroscopy within the allowable range of error.