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Si抛光片的氧化诱生层错(OSF)是一种重要的工艺诱生缺陷,为提高Si抛光片质量,应对氧化诱生层错的产生有充分的认识和了解,并加以克服,而简单、快捷、准确地显示缺陷是首要条件。介绍了采用环保的无Cr腐蚀液显示氧化诱生层错,实验发现无Cr腐蚀液能很好地显示氧化诱生层错,比较了无Cr腐蚀液和其他常用腐蚀液的缺陷腐蚀形貌,探讨了无Cr腐蚀液的腐蚀机理及腐蚀条件。实验发现环保的无Cr腐蚀液能很好地显示直拉Si单晶中的氧化诱生层错,能应用于生产。
Oxide induced layer faults (OSFs) of Si polishing films are an important process-induced defect. To improve the quality of Si polishing films, it is necessary to fully understand and overcome the generation of oxidation-induced layer faults. , Fast, accurate display of defects is the first condition. The introduction of environment - friendly Cr - free etching solution shows the oxidation induced layer faults. It is found that the Cr - free etching solution can well show the oxidation induced layer faults and the defects corrosion morphology of the Cr - free etching solution and other commonly used etching solutions. The corrosion mechanism and corrosion conditions of Cr-free etching solution were discussed. The experiment found that environment-friendly Cr-free etching solution can well show the oxidation induced layer faults in Czochralski Si single crystals and can be applied to the production.