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一、引言 扫描电子显微镜的电子束感生电流技术广泛地用于测量半导体的物理量。本文主要介绍利用这种电子束感生电流信息确定PN结的位置,测量平面器件PN结的结深,测量半导体表面载流子的复合速度,确定材料局部区域少数载流子的扩散长度和寿命,测量PN结的耗尽区宽度,研究PN结耗尽区宽度与偏置电压的关系。由于它是一种近年来最新的技术,其原理是基于电子束与固体的相互作用,这种相互作用过程直接反应了半导体的结构和特性,因而可以用它进行半导体材料研究,半导体器件新机理的研究,表面科学的研究以及半导体器件可靠性的研究。为推广这种技术的应用,提高半导体器件水平,我们向读者介绍一下这种电子束技术,报告我们的研究成果。
I. INTRODUCTION Scanning electron microscope electron beam induced current technology is widely used to measure the physical quantities of semiconductors. This paper introduces the use of such electron beam induced current information to determine the position of the PN junction, measuring the junction depth of the PN junction of the planar device, measuring the recombination velocity of carriers on the semiconductor surface, and determining the diffusion length and lifetime of the minority carriers in the material region , The width of the depletion region of the PN junction is measured, and the relationship between the width of the depletion region of the PN junction and the bias voltage is studied. Because it is a newest technology in recent years, its principle is based on the interaction of electron beam and solid. This interaction process directly reflects the structure and characteristics of the semiconductor, so that it can be used for semiconductor material research, new mechanism of semiconductor device Research, surface science research and semiconductor device reliability research. In order to promote the application of this technology and improve the level of semiconductor devices, we introduce the reader to this electron beam technology and report on our research results.