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砷化镓肖特基势垒栅场效应晶体管(以下缩写成 GaAs SB FET)在微波领域中与硅双极晶体管相比显示出更多的优良特性,在微波通信设备的微波放大器和振荡器中,从小信号低噪声和大功率放大二个方面进行着研究,现在已接近实用阶段。要想提高 SBFET 的性能,有必要把器件结构的最佳设计技术、含有缓冲层的亚微米外延生长技术、源和漏的欧姆电极形成技术,与缩短栅长相关的微细图形制造技术等许多技术加以有机结合起来。
Gallium arsenide Schottky barrier field effect transistors (abbreviated to GaAs SB FETs in the following) show more excellent characteristics in the microwave field than silicon bipolar transistors in microwave amplifiers and oscillators for microwave communication devices , From small signal low noise and high power amplifier two aspects of research, is now approaching the practical stage. In order to improve the performance of the SBFET, many techniques such as the optimum design technique of the device structure, the submicron epitaxial growth technology with a buffer layer, the ohmic electrode formation technique of the source and the drain, the micro-pattern manufacturing technology related to shortening the gate length and the like To be organically combined.