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We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube(CNT) film during its intense pulsed emission.We synthesize the CNT film on a tridimensional surface(t-CNT film).The tridimensional surface includes wet etched silicon pyramids,and the Ni layer is electroless plated thereon.The intense pulsed emission characteristics of the t-CNT and planar-grown CNT(p-CNT) films were measured using a diode structure in single-pulse mode.The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/m for t-CNTs,and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity ～12.2 V/m.The peak current of the t-CNT film increased by ～39.7% over the p-CNT film.It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.
We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube (CNT) film during its intense pulsed emission. We synthesize the CNT film on a timensimensional surface (t-CNT film). Tidimensional surface includes wet etched silicon pyramids, and the Ni layer is electroless plated thereon. The intense pulsed emission characteristics of the t-CNT and planar-grown CNT (p-CNT) films were measured using a diode structure in single-pulse mode. even turn-on field decreased from 5.5 V / μm for p-CNTs to 2.8 V / m for t-CNTs, and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity ~ 12.2 V / m. The peak current of the t-CNT film increased by ~ 39.7% over the p-CNT film. It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.